Nanoscale imaging of dopant nanostructures in silicon-based devices

When fabricating integrated circuits and different types of silicon -based devices, researchers need to position dopant nanostructures in specific ways with high levels of precision. However, arranging these structures at the nanometer scale can be challenging, as their small size makes them difficult to observe and closely examine. Incorrectly tampering with them can have detrimental effects, which can potentially compromise a device's overall functioning and security. 

CONTINUE READING ON phys.org