Revolutionizing Memory Devices: Sliding Ferroelectric Transistors in Molybdenum Disulfide for Advanced Computing-in-Memory Applications

Engineers at National Taiwan Normal University and collaborating institutions have developed promising ferroelectric transistors for computing-in-memory applications. Seeking alternatives for hardware designs that integrate computation and data storage in a single device, the researchers focused on two-dimensional semiconductors with sliding ferroelectricity, particularly molybdenum disulphide  (MoS2). They successfully achieved switchable electric polarization in MoS2 by exploiting numerous domain boundaries in the material. The resulting ferroelectric transistors demonstrated favorable characteristics, including non-volatility, reprogrammability, and low switching fields. With a thickness of about two atomic layers, these devices show promise for integration into state-of-the-art CMOS technology, contributing to the development of high-performance computing-in-memory devices.

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